Silicon process compatible trench magnetic device

ABSTRACT

A mechanism is provided for integrating an inductor into a semiconductor. A circular or other closed loop trench is formed in a substrate with sidewalls connected by a bottom surface in the substrate. A first insulator layer is deposited on the sidewalls of the trench so as to coat the sidewalls and the bottom surface. A conductor layer is deposited on the sidewalls and the bottom surface of the trench so as to coat the first insulator layer in the trench such that the conductor layer is on top of the first insulator layer in the trench. A first magnetic layer is deposited on the sidewalls and bottom surface of the trench so as to coat the first insulator layer in the trench without filling the trench. The first magnetic layer deposited on the sidewalls forms an inner closed magnetic loop and an outer closed magnetic loop within the trench.

DOMESTIC PRIORITY

This application claims priority to U.S. application Ser. No.14/200,503, filed Mar. 7, 2014, which is incorporated herein byreference in its entirety.

BACKGROUND

The present invention relates generally to semiconductor integratedmagnetic devices, and more specifically, to a toroidal trench inductor.

When constructing a semiconductor integrated magnetic device using amagnetic film, it is desirable to make the magnetic film sufficientlythick to obtain desirable operating characteristics for a givenfrequency of operation. However, the thickness of a single magneticlayer that is required for a given operating frequency of the magneticdevice may result in the build-up of eddy currents in the magneticmaterial during operation, thereby resulting in some loss. As such, themagnetic film is typically made sufficiently thin to avoid eddy currentlosses, but with the tradeoff of lower energy storage ability.

The energy storage of an integrated magnetic device can be increased,however, by building a magnetic structure using a stack of alternatingthin magnetic and insulating films, wherein the magnetic layers areseparated by a thin insulating layer. In general, the use of multiplelayers of magnetic material separated by layers of insulating materialserves to prevent the build-up of eddy currents in the magneticmaterial, while providing an effective thickness of magnetic material,which is sufficient to obtain the desired operating characteristics fora given frequency of operation.

Conventional techniques for building multilayer magnetic-insulatorstructures include sputtering techniques. In general, a sputteringprocess includes forming a multilayer stack by alternately sputteringlayers of a magnetic material and a dielectric material, patterning aphotoresist layer to form an etch mask, using the etch mask to etch themultilayer stack of magnetic-insulating layers and remove unwantedregions of the multilayer stack, and then removing the etch mask. Whilesputtering can be used to build stacks of magnetic-insulating layers,the material and manufacturing costs for sputtering are high.

BRIEF SUMMARY

According to an exemplary embodiment, a method of integrating aninductor into a semiconductor is provided. The method includes providinga circular or other closed loop trench in a substrate, in which thetrench is formed with sidewalls connected by a bottom surface in thesubstrate. The method includes depositing a first insulator layer on thesidewalls of the trench so as to coat the sidewalls and the bottomsurface, and depositing a conductor layer on the sidewalls and thebottom surface of the trench so as to coat the first insulator layer inthe trench such that the conductor layer is on top of the firstinsulator layer in the trench. A first magnetic layer is deposited onthe sidewalls and the bottom surface of the trench so as to coat thefirst insulator layer in the trench without filling the trench. Thefirst magnetic layer deposited on the sidewalls forms an inner closedmagnetic loop and an outer closed magnetic loop within the trench. Aninterior conductor path is formed by the conductor layer at an insidewall of the trench, such that the interior conductor path connects to afirst exterior conductor connection. A second exterior conductorconnection separately connects to the conductor layer formed on anoutside wall of the trench. An electrical path from the first exteriorconductor connection to the second exterior connection by way of theconductor layer in the trench forms a continuous electrical path thatpasses through the inner and outer closed magnetic loops.

According to another exemplary embodiment, an integrated inductor in asemiconductor is provided. The integrated inductor includes a circularor other closed loop trench in a substrate, in which the trench isformed with sidewalls connected by a bottom surface in the substrate. Afirst insulator layer is deposited on the sidewalls of the trench so asto coat the sidewalls and the bottom surface. A conductor layer isdeposited on the sidewalls and bottom surface of the trench so as tocoat the first insulator layer in the trench such that the conductorlayer is on top of the first insulator layer in the trench. A secondinsulator layer is deposited on top of the conductor layer on thesidewalls and the bottom surface of the trench. A first magnetic layeris deposited on the sidewalls and the bottom surface of the trench so asto coat the second insulator layer in the trench without filling thetrench. The first magnetic layer deposited on the sidewalls forms aninner closed magnetic loop and an outer closed magnetic loop within thetrench. An interior conductor path is formed by the conductor layer atan inside wall of the trench, such that the interior conductor pathconnects to a first exterior conductor connection. A second exteriorconductor connection separately connects to the conductor layer formedon an outside wall of the trench. An electrical path from the firstexterior connection to the second exterior connection by way of theconductor layer in the trench forms a continuous electrical path thatpasses through the inner and outer closed magnetic loops.

According to another exemplary embodiment, a method of integrating aninductor into a semiconductor is provided. The method includes providinga circular or other closed loop trench in a substrate, in which thetrench is formed with sidewalls connected by a bottom surface in thesubstrate such that the trench forms a closed loop formation in thesubstrate. The method includes forming a first through silicon via (TSV)outside of the closed loop formation, forming a second through siliconvia near a center of the closed loop formation, and depositing a firstmagnetic material layer on the sidewalls of the trench so as to coat thesidewalls and the bottom surface without filling the trench. The firstmagnetic material layer deposited on the sidewalls forms a first innerclosed magnetic loop and a first outer closed magnetic loop within thetrench. An electrical connection is formed between the first and secondthrough silicon via, so as to define a continuous electrical path thatpasses from the first through silicon via to the second through siliconvia and passes through the inner and outer closed magnetic loops.

Additional features and advantages are realized through the techniquesof the present invention. Other embodiments and aspects of the inventionare described in detail herein and are considered a part of the claimedinvention. For a better understanding of the invention with theadvantages and the features, refer to the description and to thedrawings.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The subject matter which is regarded as the invention is particularlypointed out and distinctly claimed in the claims at the conclusion ofthe specification. The forgoing and other features, and advantages ofthe invention are apparent from the following detailed description takenin conjunction with the accompanying drawings in which:

FIGS. 1A through 1E illustrate a fabrication process to form an embeddedtoroidal trench inductor structure according to an embodiment, in which:

FIG. 1A illustrates a cross-sectional view and its corresponding topview of fabricating the toroidal trench inductor structure according toan embodiment.

FIG. 1B illustrates a cross-sectional view and its corresponding topview of fabricating the toroidal trench inductor structure according toan embodiment.

FIG. 1C illustrates a cross-sectional view and its corresponding topview of fabricating the toroidal trench inductor structure according toan embodiment.

FIG. 1D illustrates a cross-sectional view and its corresponding topview of fabricating the toroidal trench inductor structure according toan embodiment.

FIG. 1E illustrates a cross-sectional view and its corresponding topview of fabricating the toroidal trench inductor structure according toan embodiment.

FIGS. 2A through 2F illustrate a fabrication process to form an embeddedtoroidal trench inductor structure according to an embodiment, in which:

FIG. 2A illustrates a cross-sectional view and its corresponding topview of fabricating the toroidal trench inductor structure according toan embodiment.

FIG. 2B illustrates a cross-sectional view and its corresponding topview of fabricating the toroidal trench inductor structure according toan embodiment.

FIG. 2C illustrates a cross-sectional view and its corresponding topview of fabricating the toroidal trench inductor structure according toan embodiment.

FIG. 2D illustrates a cross-sectional view and its corresponding topview of fabricating the toroidal trench inductor structure according toan embodiment.

FIG. 2E illustrates a cross-sectional view and its corresponding topview of fabricating the toroidal trench inductor structure according toan embodiment.

FIG. 2F illustrates an optional process that continues from FIG. 2Caccording to an embodiment.

FIGS. 3A and 3B together illustrate a method of integrating an inductorinto a semiconductor such as the substrate according to an embodiment.

FIG. 4 illustrates a method of integrating an inductor into asemiconductor according to an embodiment.

FIG. 5 illustrates a cross-sectional view that combines the embeddedtoroidal trench inductor structure in FIG. 1 with the though siliconvias in FIG. 2 according to an embodiment.

DETAILED DESCRIPTION

For high frequency integrated inductors, one needs a closed loop ofmagnetic material and a coil that passes through the closed loop.According to embodiments, examples are provided of a toroidal ring ofmagnetic material embedded flat in the substrate with a coil around themagnetic material.

In the present disclosure, this is done by making a circular or otherclosed loop trench and depositing magnetic material on the walls of thetrench. There are two closed loops of magnetic material made at once:the interior and exterior walls. So instead of depositing twice toachieve one closed magnetic loop, the process herein deposits once andmakes two closed loops of magnetic material. If there is more than oneconcentric trench loop, the result is that the process makes two morelayers of magnetic material for each additional trench. This means onecan get many (for multiple concentric loops) thin layers of magneticmaterial in one deposition step. The advantage of many thin magneticlayers is that the eddy current losses in the magnetic film aredetermined by the thickness of a film, while the overall inductance andmagnetic saturation current increase with the amount of magneticmaterial. The ring trench approach allows for a high inductance in asmall substrate surface area. It is noted that the trench should not befilled with conducting magnetic material as this shorts the interior andexterior walls of the magnetic layers together.

The coil (i.e., conductor material such as copper) has to pass throughthese loops of magnetic material. There are two ways to accomplish this:

1. Depositing conductor (usually copper) on the side walls and bottom ofthe trench so that there is path down the side of the trench, across thebottom and up the interior wall. This is like wrapping a very wide flatwire through the torroid.

2. Create separately silicon through visa (TSVs) by techniquesunderstood by one skilled in the art and have one inside the magneticloop and one outside, and then connect the two at the wafer backsurface. Note that embodiments may use more TSVs and/or may use morecopper layers with insulation in between to create additional coils andcoil turns.

In order to facilitate the use of thin film magnetic material,embodiments ensure that the magnetic easy axis is oriented perpendicularto the wafer (substrate) surface. This is accomplished by applying amagnetic field perpendicular to the substrate plane during depositionsand anneals. (Conventional systems have the applied magnetic filed andinduced magnetic easy axis in the plane field of the substrate.)

Embodiments deposit a thin nonmagnetic layer (examples: NiP, Ta, TaN,TiN, Cu, Ni or other metal or insulator between 5 nm (nanometers) and1000 nm) on top of the magnetic materials on the trench walls, and thedeposit a second layer of magnetic material on the trench walls. Abilayer of magnetic material with a thin nonmagnetic separator hasbetter magnetic domain properties. If the separator is insulating,implementations achieve twice the magnetic thickness without increasededdy current loss. If the separator is insulating, implementations maydeposit an additional conducting seed layer when the magnetic layer isto be electroplated.

Some implementations may have more than one coil passing through themagnetic loops done by: 1) two layers of copper on the trench wallsseparated by insulator; 2) copper on the trench walls and coil(s) madeusing TSVs and substrate surface wires; and/or 3) two or more coils madeusing TSVs and substrate surface wires.

Having two or more coils allows for transformer and coupled inductorapplications. Also, implementations may connect the coils in series toachieve more turns and a higher inductance.

In some implementations, the magnetic materials are insulated from thesubstrate, and the magnetic materials are insulated from the conductor(which improves performance). Also, after the magnetic material isdeposited, the trench may then be filled in with a nonmagnetic,non-conducting material such as oxide or polymer. This allows wiring onthe top surface and is required if the inductor is not connected toanother substrate that contains a path to close the inductor coil loop.The trench loops may be circular which provides better magneticproperties. Also, the layers of magnetic material may be deposited byelectroplating: this requires deposition of a continuous conducting seedlayer that is removed after the magnetic film deposition. The magneticproperties are better (fewer domain walls) if the magnetic material iscontinuous from the walls across the bottom of the trench.

Now turning to the figures, FIGS. 1A, 1B, 1C, 1D, and 1E (generallyreferred to as FIG. 1) illustrate a schematic to fabricate an embeddedtoroidal trench inductor structure 10 according to an embodiment. Forthe toroidal trench inductor structure 10, FIGS. 1A through 1Eillustrate cross-sectional views on the left and corresponding top viewson the right.

FIG. 1A illustrates etching a substrate 100 to eventually form twoconcentric closed loop rings of magnetic material in per single(circular and/or closed loop) trench 150. The substrate 100 may besilicon. Only one trench is shown but it is understood that two or moreconcentric (circular) trenches may be utilized as discussed herein.

FIG. 1B illustrates depositing an oxide insulator 101 in the trench 150.The sidewalls and bottom surface of the trench 150 are coated with theoxide insulator 101. The oxide insulator 101 is also deposited on thetop surface 160 of the substrate. A damascene groove 162 is etched intothe oxide insulator 101 to define the wiring traces for connection tothe inductor at the trench interior and exterior. Other materials arealso deposited in the damascene groove 162 as discussed further inFIG. 1. Note that the oxide insulator 101 is deposited so as not to fillthe trench 150 but to leave a cavity in the trench. The oxide insulator101 material may have a thickness of 50 nm (nanometers) to 1000 nm oneach sidewall and a thickness of 50 nm to 1000 nm on the bottom surface.

FIG. 1C illustrates (optionally) depositing an adhesion layer/liner 102on top of the coated oxide insulator 101 in the circular trench 150 andalso on the top surface 160 of the substrate 100. Examples of theadhesion layer/liner 102 include Ti/TiN, Ta/TaN, etc. The adhesionlayer/liner 102 is deposited (and patterned) on the top surface 160 ofthe substrate 100 in the elongated pattern wiring trace 162 so as to fitwithin the rectangular shape of the (previously deposited) oxideinsulator 101 material. Note that the adhesion layer/liner 102 isdeposited on the sidewalls and bottom surfaces of the trench 150 so asto leave a cavity in the trench 150. The adhesion layer/liner 102 mayhave a thickness of 10 nm to 1000 nm on each sidewall and a similarthickness on the bottom surface.

After depositing the adhesion layer/liner 102 in the trench 150, aconductor layer 103 is deposited on the coated adhesion layer/liner 102in the trench 150 and also on the top surface 160 of the substrate 100.A seed metal may be applied first to grow the conductor layer 103.Examples of the conductor layer 103 include copper, aluminum, Ni, NiFe,Co, CoW. Note that if a magnetic film is to be plated, a magnetic seedmaterial (metal) is desirable first (even in FIG. 2 below), and in onecase, the magnetic seed may be a bilayer with copper for conductivityand then magnetic material. The conductor layer 103 is deposited on thetop surface 160 of the substrate 100 so as to fill the damascene grooveor wiring trace 162. Excess conductor and seed on the surface outsidethe groove 162 can then be removed by CMP(chemical-mechanical-polishing). Alternatively, the damascene groove 162can be omitted from the design, and the conductor plating regionrestricted to the wiring traces may be formed with a photopatternedphotoresist layer in which case the excess seed is removed by etchingfollowing the removal of the photoresist. Note that the conductor layer103 is deposited so as to leave a cavity in the trench 150. Theconductor layer 103 may have a thickness of 50 nm to 1000 nm on eachsidewall on the bottom surface. Since there may be some reduction inthickness on the trench bottom, the deposition thickness may be chosento achieve a minimum thickness of 25 nm on the trench bottom. As aresult of deposition, the conductor layer 103 has an inner closed loopof conductor material lining the inner sidewall and an outer closed loopof conductive material lining the outer sidewall of the trench 150. Theinner closed loop of the conductor layer 103 and the outer closed loopof the conductor layer 103 are connected by the bottom surface ofconductor layer 103 at the bottom of the trench.

FIG. 1D illustrates depositing a second insulator 104 on top of thecoated conductor layer 103 in the trench 150 and also on the top surface160 of the substrate 100. Examples of the insulator 104 include silicondioxide, SiN, SiCNi, polyimide, and polybenzoxazole (PBO). The insulator104 is deposited on the top surface 160 of the substrate 100 in theelongated pattern wiring trace 162 so as to fit within the rectangularshape of the (previously deposited) oxide insulator 101, the adhesionlayer/liner 102, and conductor layer 103. Note that the second insulator104 is deposited in the trench 150 so as to leave a cavity in the trench150. The second insulator material 104 may have a thickness of 10 nm to1000 nm on each sidewall and on the bottom surface.

After depositing the second insulator 104 within the trench 150, a seedmetal 105 is deposited on the coated insulator 104 in both the trench150 and also on the top surface 160 of the substrate 100. Examples ofthe seed metal 105 copper, aluminum, Ni, NiFe, Co, and CoW. The seedmetal 105 is deposited on the top surface 160 of the substrate 100. Notethat the seed metal 105 is deposited in the trench 150 so as leave acavity in the trench 150. The seed metal 105 may have a thickness of 10nm to 1000 nm on each sidewall and on the bottom surface.

A photomask 106 is deposited on the top surface 106 as a pattern fordepositing a magnetic film 107. The photomask 106 covers the entiresubstrate 100 (including the elongated pattern wiring trace 162) exceptfor the trench 150. The magnetic film 107 is deposited on the coatedseed metal 105 in the trench 150 and also on the top surface 160 of thesubstrate 100. The magnetic film 107 is magnetic material. The magneticfilm 107 is deposited and/or thermally annealed within (the presence) ofa vertical (perpendicular to the substrate plane) magnetic field 120(represented by an arrow) such that the magnetic film 107 has an inducedmagnetic anisotropy, which means that the easy axis of the magnetic film107 is aligned with the magnetic field and is perpendicular to the(horizontal) plane of the substrate. The magnetic material of themagnetic film 107 may be deposited by electroplating. Examples of themagnetic film 107 include NiFe, CoWP, Fe, CoFeB, etc. The magnetic film107 is not deposited on the top surface 160 of the substrate 100 in theelongated pattern 162 or at least is removed when the photomask 106 isremoved. Note that the magnetic film 107 is deposited in the trench 150so as to leave a cavity in the trench 150. The magnetic film 107 mayhave a thickness of 100 nm to 3000 nm on each sidewall and on the bottomsurface. If plating or deposition process limitations cause the filmthickness to vary and be thinner on and near the bottom of the trench,this is undesirable. In this case, the inductor will still work albeitwith smaller inductance even if the magnetic film 107 thickness is zeroon the trench bottom. The magnetic film 107 has an inner closed loop ofmagnetic material lining the inner sidewall and an outer closed loop ofmagnetic material lining the outer sidewall of the trench 150. These theinner and outer closed loops of magnetic film 107 are two magneticlaminate layers currently deposited in the trench 150.

FIG. 1E illustrates removing the photomask 106. A photopatternedinsulator 108 is deposited to fill in the trench 150 and as an overcoaton top of the substrate 100. Examples of the photopatterned insulator108 may include photosensitive-polyimide (PSPI), polybenzoxazole (PBO),etc.

Two via openings 109A and 109B are opened (i.e., etched) down to theconductor layer 103 on the elongated rectangular pattern (portion) 162,such that the conductor layer 103 is exposed at two separate locationson the elongated pattern 162. The via opening 109A is on the outside ofthe circular trench 150 while the via opening 109B is in about thecenter of the circular formation made by the circular trench. Thetoroidal trench inductor structure 10 is complete and can be connectedfurther by depositing wiring over the via openings 109A and 109B.

As noted above, the conductor layer 103 has the inner closed loop ofconductive material lining the inner sidewall and the outer closed loopof conductive material lining the outer sidewall of the trench 150,along with the bottom surface of conductor layer 107 connecting theinner and outer loops of conductor material. Via the elongated pattern162, the opening 109A is configured so that one polarity (e.g.,positive) of a voltage source electrically connects to the outer closedloop of conductor layer 103 while the opening 109B is configured so thatthe opposite polarity (e.g., negative) of the voltage sourceelectrically connects to the inner closed loop of the conductor layer103. When the voltage source is turned on, electrical current flows fromthe positive side of the voltage source, into the opening 109A, throughthe elongated pattern 162, down the outer closed loop of conductor layer103 in the trench 150, through the bottom conductor layer 103 on thebottom surface in the trench 150, up the inner closed loop of conductorlayer 103, out the elongated pattern 162, and out the opening 109B backto the voltage source. Note that the elongated pattern wiring trace 162has a first exterior conductor connection 164A that connects(electrically) to the conductor layer 103 at the inside wall (i.e., theinner closed loop of the conductor layer 103) of the trench 150. Also,the elongated pattern wiring trace 162 has a second exterior conductorconnection 164B that separately (electrically) connects to the conductorlayer 103 formed on an outside wall of the trench 150.

According to another embodiment, FIGS. 2A, 2B, 2C, 2D, 2E, and 2F(generally referred to as FIG. 2) illustrate a schematic to fabricate anembedded toroidal trench inductor structure 20. For the toroidal trenchinductor structure 20, FIGS. 2A through 2F illustrate cross-sectionalviews on the left and corresponding top views on the right.

FIG. 2A illustrates forming two through silicon vias (TSVs) 201A and201B etched into a substrate 200 as understood by one skilled in theart. The substrate 200 (or 100 in FIG. 1) may be a silicon wafer. Othersubstrates may include glasses, SiO₂, polymers (such as polymide, SiC,tungsten carbide, titanium carbide, and N58), and aluminum oxide. TheTSVs 201A and 201B are vertical electrical connections also referred toas vertical interconnect vias. The TSVs 201A and 201B are filled withconductor material 26 surrounded by insulating material 28. When thesubstrate is not silicon, the through silicon vias (TSVs) can bereplaced with other through-substrate-via structures, as the utilizationof the through silicon via structure is not a requirement. An examplewould be the copper filled vias used with glass substrates.

Back end of line (BEOL) wiring 202 is deposited on top of the substrate200 including the TSVs 201A and 201B. The BEOL wiring 202 may be metalwiring such as copper, aluminum, gold, etc. An optional handler 203 isattached to the top of the substrate 200 including the BEOL wiring 202.The handler 203 is an additional substrate attached temporarily to thewafer with an adhesive to give structural support during processing of athinned wafer. If the thinned wafer thickness is sufficient formechanical stability during processing it may not be necessary. Handlersare most commonly silicon-thermal-expansion-matched borosilicate glassor silicon.

FIG. 2B shows that that the substrate 200 is flipped over and thesubstrate 200 (wafer) is thinned, e.g., by polishing, to expose the TSVs201A and 201B. A circular trench 204 (as discussed above) is etched intothe substrate 200 to form a ring. The exposed TSV 201A is outside (i.e.,to the exterior) of the trench 204. The circular trench 204 encirclesthe TSV 201B. Since the substrate (wafer) 200 has been flipped over, theprevious bottom side will now be referred to as the top side, such thatthe handler 203 is now on the bottom side.

FIG. 2C illustrates depositing a blanket deposit of seed 205 in thetrench 204. The sidewalls and bottom surface of the trench 204 arecoated with the seed 205. The seed 205 is also deposited on a topsurface 260 of the substrate 200. Note that the seed 205 is deposited inthe trench 204 so as to leave a cavity in the trench 204. Examples ofthe seed 205 include Ti/TiN, TaTaN, Cu, Ni, NiFe, Co, CoW, and/orseveral of these materials deposited in sequence or other conductingmaterials. The seed 205 material may have a thickness of 10 to 1000 nmon each sidewall and on the bottom surface. Some reduction in thicknesson the trench bottom due to process limitations can be tolerated as longas the film is continuous.

Additionally, photomask 206 is deposited and patterned on the substrate200 in FIG. 2C. The photomask 206 covers the entire substrate 200 exceptfor the trench 204. A (first) magnetic film 207 is deposited on (and/orgrown from) the seed 205 in the trench 204. The magnetic film 207 ismagnetic material. The magnetic film 207 is deposited and/or thermallyannealed within (the presence) of a magnetic field 220 (represented byan arrow) such that the magnetic film 207 has an magnetic anisotropy or“easy axis” of the magnetic film 207 that is perpendicular to thesubstrate plane. The magnetic material of the magnetic film 207 may bedeposited by electroplating. Examples of the magnetic film 207 includeNiFe, CoWP, Fe, CoFeB, etc. The magnetic film 207 is not deposited onthe top surface 260 of the substrate 200 except as desired to allow foralignment tolerances, or in the case when multiple concentric trenchesare used, the magnetic material can be continuous between trenches. Notethat the magnetic film 207 is deposited in the trench 204 so as to leavea cavity in the trench 204. The magnetic film 207 may have a thicknessof 100 to 3000 nm on each sidewall and on the bottom surface. If platingor deposition process limitations cause the film thickness to vary andbe thinner on and near the bottom of the trench, this is undesirable. Inthis case, the inductor will still work albeit with smaller inductanceeven if the magnetic film thickness is zero on the trench bottom. Themagnetic film 207 has an inner closed loop of magnetic material liningthe inner sidewall and an outer closed loop of magnetic material liningthe outer sidewall of the trench 204.

In an alternate method, the magnetic film 207 is not a single magneticlayer but instead is formed as a coupled magnetic multilayer where the afirst magnetic layer of half the intended thickness is deposited, then anonmagnetic conductor such as NiP or Cu is deposited to a thicknessbetween 10 nm and 1000 nm, and a second magnetic film making up theremaining magnetic material is deposited. An example is theNiFe/NiP/NiFe coupled magnetic film where the plating conditions arechanged during electroplating to alter the material composition. Coupledmagnetic films have improved magnetic domain properties as known tothose skilled in the art.

FIG. 2D illustrates that the cavity in the magnetic film 207 in thetrench 204 is going to be filled. Also, the photomask 206 is etched awayand the seed 205 on the top surface 260 is etched away.

Now, a blanket of oxide 208 is deposited on the top surface 260. Theoxide layer 208 covers the entire the top surface 260 of the substrate200. The oxide layer 208 is deposited on the coated magnetic film 207 inthe trench 204. Note that the oxide layer 208 is deposited in the trench204 so as to leave a cavity in the trench 204. The oxide layer 208 mayhave a thickness of 10 nm to 1000 nm on each sidewall and on the bottomsurface.

A blanket of seed 209 is deposited on the top surface 260. The seed 209covers the entire the top surface 260 of the substrate 200. The seed 209is deposited on the oxide layer 208 in the trench 204. Note that theseed 209 is deposited in the trench 204 so as to leave a cavity in thetrench 204. The seed 209 material may have a thickness of 10 to 1000 nmon each sidewall on the bottom surface.

Also, a photomask 210 is deposited and patterned on the top surface 260of the substrate 200, so as to leave an opening for depositing a(second) magnetic film 211 in the trench 204. The magnetic film 211 isdeposited on (and/or grown from) the coated seed 209. The magnetic film211 is magnetic material (which may be the same magnetic material ordifferent magnetic material than the magnetic film 207). The magneticfilm 211 is deposited within (the presence) of the magnetic field 220(represented by an arrow) such that the magnetic film 207 has ananisotropy direction perpendicular to the wafer surface. Examples of themagnetic film 211 include NiFe, CoWP, Fe, CoFeB, etc. The magnetic film211 is not deposited on the top surface 260 of the substrate 200, andthe magnetic film 211 leaves a cavity in the trench 204. The magneticfilm 211 may have a thickness 100 to 3000 nm on each sidewall and on thebottom surface. If plating or deposition process limitations cause thefilm thickness to vary and be thinner on and near the bottom of thetrench this is undesirable. The inductor will still work albeit withsmaller inductance even if the magnetic film thickness is zero on thetrench bottom. The magnetic film 211 also has an inner closed loop ofmagnetic material lining the inner sidewall and an outer closed loop ofmagnetic material lining the outer sidewall of the trench 204.

The process discussed in FIG. 2D may be repeated (multiple times) tobuild up more laminated magnetic film layers 211 in the trench 204.Currently, two magnetic film layers 207 and 211 are shown which resultin four closed loops of magnetic material.

FIG. 2E illustrates that the photomask 210 is etched away and the seed209 (only) on the top surface 260 is etched away. An insulator 228 isapplied on the top surface 260 and to fill the trench 204. The insulator228 and insulator 208 are patterned/etched to expose the inductorelectrical contacts which are the TSVs 201A and 201B. Examples of theinsulator 228 may include photosensitive-polyimide (PSPI),polybenzoxazole (PBO), etc. Although not shown, the process may continueby adding wiring, pads, and solder balls as understood by one skilled inthe art. When complete, the handler 203 is removed.

Optionally, FIG. 2D (and FIG. 2E) may be skipped in one implementationand the process may flow directly from FIG. 2C to FIG. 2F. In that case,FIG. 2F illustrates that that the deposition of the magnetic film 207 inthe trench 204 leaves a cavity to be filled. Also, the photomask 206 isetched away and the seed 205 on the top surface 260 is etched away. Theinsulator 228 is applied on the top surface 260 and to fill the trench204. The insulator 228 is patterned to expose the inductor electricalcontacts which are the TSVs 201A and 201B. Examples of the 228 mayinclude photosensitive-polyimide (PSPI), polybenzoxazole (PBO), etc.Although not shown, the process may continue with by adding wiring,pads, and solder balls as understood by one skilled in the art. Whencomplete, the handler 203 is removed. The implementation in FIG. 2F onlyhas one application/deposition of magnetic film layer 207 which resultsinto two closed loops of magnetic material (i.e., two magnetic laminatelayers).

It is noted that the magnetic materials discussed herein may bedeposited by any method such as sputtering, evaporation, CVD,electroplating, and electroless plating. Further, FIG. 5 illustrates across-sectional view 500 that combines the embedded toroidal trenchinductor structure 10 with the TSV 201A and 201B from FIG. 2 accordingto an embodiment. Reference can be made to FIGS. 1 and 2 discussedabove. The inductor 10 shown in FIG. 5 provides a two coil structurethat is useful for coupled inductors. As discussed in FIG. 1E, theelongated pattern wiring trace 162 (via the first exterior conductorconnection 164A) electrically connects to the conductor layer 103 at theinside wall (i.e., the inner closed loop of the conductor layer 103) ofthe trench 150. Also, the elongated pattern wiring trace 162 (via thesecond exterior conductor connection 164B) separately connectselectrically to the conductor layer 103 formed on an outside wall of thetrench 150. In addition to that (first) electrical path formed by thewiring trace 162 in FIG. 1, the through silicon vias 201A and 201B alongwith BEOL 202 for a separate electrical path. For example, the firstthrough silicon via (TSV) 201A is formed outside of the circular trench150, and the second through silicon 201B is formed near the center ofthe circular trench 150. An electrical connection is formed between thefirst and second through silicon vias (and the BEOL 202), so as todefine a continuous electrical path that passes from the first throughsilicon via 201A to the second through silicon via 201B and passesthrough the inner and outer closed magnetic loops.

FIGS. 3A and 3B together illustrate a method 300 of integrating theinductor 10 into a semiconductor such as the substrate 100 according toan embodiment. Reference can be made to FIG. 1. The method includesproviding a circular trench 150 in the substrate 100, where the trench150 is formed with sidewalls connected by a bottom surface in thesubstrate 150 at block 305.

At block 310, a first insulator layer 101 is deposited on the sidewallsof the trench 150 so as to coat the sidewalls and the bottom surface. Atblock 315, a conductor layer 103 is deposited on the sidewalls and thebottom surface of the trench 150 so as to coat the first insulator layer101 in the trench such that the conductor layer 103 is on top of thefirst insulator layer 101 in the trench.

At block 320, a second insulator layer 104 is deposited on top of theconductor layer 103 on the sidewalls and the bottom surface of thetrench 150. At block 325, magnetic material 107 is deposited on thesidewalls and the bottom surface of the trench 150 so as to coat thesecond insulator layer 104 in the trench 150 without filling the trench.Note that the seed layer 105 is optional for electroplating.

At block 330, the conductor layer 103 deposited on the sidewalls formsan inner closed loop (i.e., the closed loop of conductor layer 103material on the inner wall of the trench 150) and an outer closed loop(i.e., the closed loop of conductor layer 103 material on the outer wallof the trench 150) within the trench 150 connected by a bottom conductorlayer 103 on the bottom surface of the trench 150, in which the innerclosed loop, the outer closed loop, and the bottom conductor layer 130form an interior conductor path inside the trench 150, such that theinterior conductor path passes underneath and around sides of themagnetic material 107 in the trench 150. Note that the magnetic material107 also has its own inner closed loop and outer closed loop easier seenwhen viewed from a top view.

At block 335, the interior conductor path inside the trench 150 connectsto an exterior conductor path (which is the wiring trace 162 of theconductor layer 130), and the exterior conductor path separatelyconnects to the inner loop of the conductor layer 103 (by the wiringtrace 162 of the conductor layer 103 on the surface 160 encircled by thetrench 150 connecting to the inner wall of the conductor layer 103 inthe trench 150) and the outer loop of the conductor layer 103 (by theelongated pattern 162 of the conductor layer 103 on the surface 160 notencircled by the trench 150 connecting to the outer wall of theconductor layer 103 in the trench 150).

The exterior conductor path is a wiring trace 162 of the conductor layer103 applied on a top surface 160 of the substrate 100. The wiring trace162 of the conductor layer 130 is concurrently deposited on the topsurface of substrate 100 (but is not in the trench 150) when depositingthe conductor layer 130 inside the trench 150.

The method can continue by depositing a third insulator layer (just likeinsulator layer 104 but within the previously deposited magneticmaterial 107) on the sidewalls and the bottom surface of the trench 150so as to coat the magnetic material 107 in the trench 150 withoutfilling the trench 150, and then depositing a second magnetic material(just as the magnetic material 107 was previously deposited on/grownfrom the seed material 105) on the sidewalls and the bottom surface ofthe trench 150 so as to coat the third insulator layer in the trench 150without filling the trench 150.

A magnetic field 120 aligned perpendicular to the substrate plane isapplied while depositing the magnetic material 107 and/or during asubsequent thermal anneal causing the magnetic material to have aninduced anisotropy perpendicular (i.e., vertical) to the plane of thesubstrate 100.

The method where depositing the magnetic material 107 comprises acoupled magnetic film made by electroplating NiFe as the magneticmaterial, subsequently electroplating NiP, and then electroplating NiFeagain in a (single) continuous electroplating process of the magneticmaterial 107. An alterative method where the magnetic layer is a coupledmagnetic film as known in the art where the magnetic film has sublayersmade by depositing a magnetic material, subsequently electroplating aconducting nonmagnetic material, and then electroplating anothermagnetic layer. For eddy current purposes the two layers together needto be thin enough to avoid eddy current losses and then multiple pairsof these magnetic bilayers are built up separated by having an insulatorin between. The nonmagnetic material would be a conductor which meansone does not need to deposit a new adhesion layer and seed metal.Nonmagentic layers include Ni, Cu, NiP, Ta, Ti, and others.

FIG. 4 illustrates a method 400 of integrating an inductor 20 into asemiconductor (substrate 200) according to an embodiment. The methodincludes providing a circular trench 204 in the substrate 200, where thetrench 204 is formed with sidewalls connected by a bottom surface in thesubstrate 200 such that the trench forms a circular formation in thesubstrate 200 at block 405.

A first through silicon via (TSV) 201A is formed outside of the circularformation at block 410, and a second through silicon via 201B is formednear a center of the circular formation at block 415. In one case, notethat the first and second through silicon vias 201A and 201B may beformed prior to the trench 204.

A first magnetic material layer 207 is deposited on the sidewalls of thetrench 204 so as to coat the sidewalls and the bottom surface withoutfilling the trench 204 at block 420. The first magnetic material layer207 deposited on the sidewalls forms a first inner closed loop and afirst outer closed loop within the trench 204 at block 425.

The method includes depositing a first insulator layer 208 on thesidewalls and the bottom surface of the trench 204 so as to coat thefirst magnetic material layer 207 in the trench 204 such that the firstinsulator layer 208 is on top of the first magnetic material layer 207in the trench 204 without filling the trench. The method includesdepositing a second magnetic material layer 211 (seed layer 209 isoptional) on top of the first insulator layer 208 on the sidewalls andthe bottom surface of the trench 204 without filling the trench. Thesecond magnetic material 211 is deposited on the sidewalls and thebottom surface of the trench 204 so as to coat the first insulator layer208 in the trench 204 without filling the trench. Note that the seedmaterial 205 may be deposited first when electroplating the secondmagnetic material 211.

The second magnetic material layer 211 deposited on the sidewalls formsa second inner closed loop and a second outer closed loop within thetrench. A (top) second insulator 228 is deposited to fill in the trench204 and cover the surface of the substrate 200. The method includesetching two separate openings 201A and 201B in the second insulator 228and first insulator 208 to expose both the first through silicon via201A and the second through silicon via 201B through the secondinsulator 228.

For illustration purposes, various deposition techniques are discussedbelow and can be utilized in embodiments, as understood by one ofordinary skill in the art. Thin film deposition is the act of applying athin film to a surface which is any technique for depositing a thin filmof material onto a substrate or onto previously deposited layers. Thinis a relative term, but most deposition techniques control layerthickness within a few tens of nanometers. Molecular beam epitaxy allowsa single layer of atoms to be deposited at a time. Deposition techniquesfall into two broad categories, depending on whether the process isprimarily chemical or physical. Chemical vapor deposition utilizes afluid precursor that undergoes a chemical change at a solid surface,leaving a solid layer. Chemical deposition is further categorized by thephase of the precursor and examples of chemical deposition include, butare not limited to: plating; chemical solution deposition (CSD) orchemical bath deposition (CBD); spin coating or spin casting; chemicalvapor deposition (CVD); plasma enhanced CVD (PECVD); atomic layerdeposition (ALD); and so forth.

Physical vapor deposition (PVD) uses mechanical, electromechanical, orthermodynamic means to produce a thin film of solid. Examples ofphysical deposition include but are not limited to: a thermal evaporator(i.e., molecular beam epitaxy); an electron beam evaporator; sputtering;pulsed laser deposition; cathodic arc physical vapor deposition(arc-PVD); electrohydrodynamic deposition (electrospray deposition);reactive PVD; and so forth.

Note that eddy currents are electric currents induced within conductorsby a changing magnetic field in the conductor. These circulating eddiesof current have inductance and thus induce magnetic fields. The strongerthe applied magnetic field, the greater the electrical conductivity ofthe conductor, or the faster the field changes, then the greater theeddy currents that are developed and the greater the fields produced.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, element components,and/or groups thereof.

The corresponding structures, materials, acts, and equivalents of allmeans or step plus function elements in the claims below are intended toinclude any structure, material, or act for performing the function incombination with other claimed elements as specifically claimed. Thedescription of the present invention has been presented for purposes ofillustration and description, but is not intended to be exhaustive orlimited to the invention in the form disclosed. Many modifications andvariations will be apparent to those of ordinary skill in the artwithout departing from the scope and spirit of the invention. Theembodiment was chosen and described in order to best explain theprinciples of the invention and the practical application, and to enableothers of ordinary skill in the art to understand the invention forvarious embodiments with various modifications as are suited to theparticular use contemplated.

The diagrams depicted herein are just one example. There may be manyvariations to this diagram or the steps (or operations) describedtherein without departing from the spirit of the invention. Forinstance, the steps may be performed in a differing order or steps maybe added, deleted or modified. All of these variations are considered apart of the claimed invention.

While the preferred embodiment to the invention had been described, itwill be understood that those skilled in the art, both now and in thefuture, may make various improvements and enhancements which fall withinthe scope of the claims which follow. These claims should be construedto maintain the proper protection for the invention first described.

What is claimed is:
 1. An integrated inductor in a semiconductor, theintegrated inductor comprising: a closed loop trench in a substrate,wherein the trench is formed with sidewalls connected by a bottomsurface in the substrate; a first insulator layer deposited on thesidewalls of the trench so as to coat the sidewalls and the bottomsurface; a conductor layer deposited on the sidewalls and the bottomsurface of the trench so as to coat the first insulator layer in thetrench such that the conductor layer is on top of the first insulatorlayer in the trench; a second insulator layer deposited on top of theconductor layer on the sidewalls and the bottom surface of the trench;and a first magnetic layer deposited on the sidewalls and the bottomsurface of the trench so as to coat the second insulator layer in thetrench without filling the trench; wherein the first magnetic layerdeposited on the sidewalls forms an inner closed magnetic loop and anouter closed magnetic loop within the trench; wherein an interiorconductor path is formed by the conductor layer at an inside wall of thetrench, such that the interior conductor path connects to a firstexterior conductor connection; wherein a second exterior conductorconnection separately connects to the conductor layer formed on anoutside wall of the trench; and wherein an electrical path from thefirst exterior conductor connection to the second exterior conductorconnection by way of the conductor layer in the trench forms acontinuous electrical path that passes through the inner and outerclosed magnetic loops.
 2. The integrated inductor of claim 1, whereinthe first exterior conductor connection and the second exteriorconductor connection are an elongated pattern wiring trace of theconductor layer applied on a top surface of the substrate; and whereinthe closed loop trench is a circular trench.
 3. The integrated inductorof claim 2, wherein the elongated pattern wiring trace of the conductorlayer is concurrently deposited on the top surface of substrate that isnot in the trench when depositing the conductor layer inside the trench.4. The integrated inductor of claim 1, further comprising a thirdinsulator layer deposited on the sidewalls and the bottom surface of thetrench so as to coat the first magnetic layer in the trench withoutfilling the trench; and a second magnetic layer deposited on thesidewalls and the bottom surface of the trench so as to coat the thirdinsulator layer in the trench without filling the trench.
 5. Theintegrated inductor of claim 1, further comprising applying a magneticfield aligned perpendicular to a plane of the substrate while depositingthe first magnetic layer thereby causing the first magnetic layer tohave an anisotropy; wherein the anisotropy is perpendicular to the planeof the substrate.